Quantifying Surface Recombination—Improvements in Determination and Simulation of the Surface Recombination Parameter <i>J</i> ₀ <i> _s </i>

The recombination parameter J 0 xmlns:xlink="http://www.w3.org/1999/xlink">s provides an important metric to characterize surface recombination. For its calculation, numerous methods and models have be applied. Since the for Auger radiative in crystalline silicon were recently revised, it is investigate influence of these changes on . origin possible ways obtaining from effective lifetime measurements as well simulations are described detail, including potential fit full curve a new approach that based upon reparameterization excess charge carrier density Δ xmlns:xlink="http://www.w3.org/1999/xlink">n Using measurements, we find values determined with older parameterization by Richter et al. will result erroneous up 5 fA/cm 2 , depending chosen conditions. By simulating near surface, highly doped structures, such emitters, shown errors can even go 50%. If used simulation, highlight importance having parameterizations being corresponding intrinsic Therefore, update at oxide-passivated phosphorous surfaces given models. Finally, give some best-practice examples how recent improvements affect pitfalls.